Publications
Pirouz, P. (2014). Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth. Materials Express, 4 (1), 41-53.
Cowen, J., Lucas, L., Ernst, F., Pirouz, P., Hepp, A., & Bailey, S. (2005). Liquid-Phase Deposition of Single-Phase Alpha-Copper-Indium-Diselenide. Materials Science and EngineeringB, 116 (), 311-319.
Pirouz, P., Ernst, F., & Ikuhara, Y. (1998). On Epitaxy and Orientation Relationship in Bicrystals. Diffusion and Defect Data Part B,,&²Ô²ú²õ±è;59–60&²Ô²ú²õ±è;(),&²Ô²ú²õ±è;51–62.
Ernst, F., Pirouz, P., & Bauser, E. (1992). Lattice Mismatch Accommodation at GeSi/(111)Si Interfaces\ Grown by Liquid Phase Epitaxy. Physica Status Solidi (a),&²Ô²ú²õ±è;131&²Ô²ú²õ±è;(),&²Ô²ú²õ±è;651–662.
Ernst, F., Pirouz, P., & Heuer, A. H. (1991). HRTEM Study of a Cu/Al2O3 Interface. Philosophical Magazine A,&²Ô²ú²õ±è;63&²Ô²ú²õ±è;(),&²Ô²ú²õ±è;259–277.
Pirouz, P., Yang, J., Powell, J., & Ernst, F. (1991). The Role of Dislocations in the 3C6H SiC Polytypic Transformation. Inst. Phys. Conf. Ser. No.,&²Ô²ú²õ±è;117(3)&²Ô²ú²õ±è;(),&²Ô²ú²õ±è;149–154.
Ernst, F., Pirouz, P., & Heuer, A. H. (1989). High Resolution Electron Microscopy of an Alumina/Copper Interface. ,&²Ô²ú²õ±è;138&²Ô²ú²õ±è;(),&²Ô²ú²õ±è;557–562.
Ernst, F., & Pirouz, P. (1989). The Formation Mechanism of Planar Defects in Compound Semiconductors Grown Epitaxially on {100} Silicon Substrates. Journal of Materials Research,&²Ô²ú²õ±è;4&²Ô²ú²õ±è;(),&²Ô²ú²õ±è;834–842.
Cheng, T., Pirouz, P., & Ernst, F. (1988). Inversion Domain Boundary Dislocations in Heteroepitaxial Films. ,&²Ô²ú²õ±è;144&²Ô²ú²õ±è;(),&²Ô²ú²õ±è;189–194.
Ernst, F., & Pirouz, P. (1988). Formation of Planar Defects in the Epitaxial Growth of GaP on Si Substrate by MOCVD. Journal of Applied Physics,&²Ô²ú²õ±è;64&²Ô²ú²õ±è;(),&²Ô²ú²õ±è;4526–4530.
Pirouz, P., Ernst, F., & Cheng, T. (1988). Heteroepitaxy on (001) Silicon: Growth Mechanisms and Defect Formation. ,&²Ô²ú²õ±è;116&²Ô²ú²õ±è;(),&²Ô²ú²õ±è;57–70.
Pirouz, P., Yang, J., Ernst, F., & Möller, H. (1988). Hexagonal Silicon: A New HREM Study. ,&²Ô²ú²õ±è;139&²Ô²ú²õ±è;(),&²Ô²ú²õ±è;199–204.